BUK456-60A DATASHEET PDF

BUKA datasheet, BUKA circuit, BUKA data sheet: PHILIPS – PowerMOS transistor,alldatasheet, datasheet, Datasheet search site for. MAX. MAX. UNIT field effect power transistor in a plastic envelope. BUK . This data sheet contains target or goal specifications for product development. Philips Semiconductors Product Specification PowerMOS transistor BUKA /B GENERAL DESCRIPTION N-channel enhancement mode field-effect power.

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No liability will be accepted by the publisher for any consequence of byk456-60a use. The information presented in this document does not form part of any quotation or contract, it is believed to be. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

No liability will be accepted by the publisher for any. This data sheet contains target or goal specifications for product development.

Where application information is given, it is advisory and does not form part of the specification. These are stress ratings only and. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Normalised continuous drain current.

Exposure to limiting values for extended periods may affect device reliability. Publication thereof bui456-60a not convey nor imply any license under patent or other industrial or intellectual property rights.

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datasheet Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Application information Where application information is given, it is advisory and does not form part of the specification. Refer to mounting instructions for TO envelopes.

This data sheet contains target or goal specifications for product development.

BUKA in stock = 0

Typical capacitances, Ciss, Coss, Crss. Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. These products are not designed for use in life support appliances, devices or systems where malfunction of these.

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buk456-600a Typical turn-on gate-charge characteristics. Philips customers using or selling these products for use in such bu4k56-60a do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

BUK equivalent datasheet & applicatoin notes – Datasheet Archive

Typical reverse diode current. Stress above one or more of the limiting values may cause permanent damage to the device. This data sheet contains final product specifications. Normalised drain-source on-state resistance. Reproduction in whole or in part datasheett prohibited without the prior written consent of the.

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No liability will be accepted by the publisher for any consequence of its use.

C April 2 Rev 1. April 7 Rev 1. April 7 Rev 1. Stress above one or more of the limiting values may cause permanent damage to the device. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. All buk4456-60a are reserved. Application information Where application information is given, it is advisory and does not form part of the specification. TOAB; pin 2 connected to mounting base.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. April 6 Rev 1.

(PDF) BUK456-60A Datasheet download

Publication thereof does not convey nor imply any datasneet under patent or other. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Exposure to limiting values for extended periods may affect device reliability. These catasheet stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

This data sheet contains final product specifications. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Philips customers using or selling these products.