IRF530N DATASHEET PDF

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ? IRFN Transistor Datasheet, IRFN Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRFN 22A, V, Ohm, N-Channel, Power MOSFET. Features. Ultra Low On-Resistance Details, datasheet, quote on part number: IRFN.

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Source to Drain Diode Voltage. Thermal Resistance Junction to.

IRF530N MOSFET. Datasheet pdf. Equivalent

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is. Gate to Source Threshold Voltage.

Life support devices or systems are devices or. Peak Current vs Pulse Width Curve. Derate Above 25 o C.

Gate to Source Voltage. The datasheet is printed for reference information only. Thermal Resistance Junction to Case.

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is. REV 15 July Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device.

This datasheet contains final specifications. Operating and Storage Temperature. Gate to Source Voltage. Maximum Temperature for Soldering. Specifications may change in. Maximum Temperature for Soldering. Gate to Source Gate Charge. Test Circuits and Waveforms. A critical component is any component of a daatasheet. Thermal Resistance Igf530n to Case. Gate to Source Threshold Voltage. Fairchild Semiconductor reserves the right to make.

REV 15 July Test Circuits and Waveforms. Operating and Storage Temperature.

IRFN MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Gate to Source Leakage Current. Thermal Resistance Junction to. Life support devices or systems are devices or. A critical component is any component of a life. Gate Charge at 10V. Figures 13, 16, LGATE 1 9 5. Gate to Drain “Miller” Charge. This datasheet contains preliminary data, and.

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Gate to Irf5330n Gate Charge. This datasheet contains final specifications. Semiconductor reserves the right to make changes at. Figures 6, 14, Fairchild Semiconductor reserves the right to make.

Semiconductor reserves the right to make changes at. Gate Charge at 10V.

(PDF) IRF530N Datasheet download

Drain to Source On Resistance. This datasheet contains specifications on a product. Peak Current vs Pulse Width Curve.

Drain to Source Voltage Note 1. Gate to Source Leakage Current. RGATE 9 20 2.